Abstract
Impurity resonant state p-doping was recently proposed as an alternative to the commonly used p-GaN for high-efficiency nitride-based light-emitting diodes (LEDs) in order to address the issue of electron leakage and efficiency droop. We demonstrated that due to the effective acceptor ionization and reduction of the potential barrier for hole injection, a more symmetrical electron and hole injection and distribution could be achieved. Our experimental results revealed that the LEDs with this alternative p-type layer exhibited a higher quantum efficiency and reduced efficiency droop. We expect this approach to be equally applicable for deep-UV laser diodes and LEDs to replace the commonly used absorptive p-GaN layer.
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