Paper

Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes

, , , , , , , , and

Published 11 October 2018 © 2018 IOP Publishing Ltd
, , Special Issue on the Best Early Career Research Published in SST 2018 Citation Zhiqiang Liu et al 2018 Semicond. Sci. Technol. 33 114004 DOI 10.1088/1361-6641/aadc01

0268-1242/33/11/114004

Abstract

Impurity resonant state p-doping was recently proposed as an alternative to the commonly used p-GaN for high-efficiency nitride-based light-emitting diodes (LEDs) in order to address the issue of electron leakage and efficiency droop. We demonstrated that due to the effective acceptor ionization and reduction of the potential barrier for hole injection, a more symmetrical electron and hole injection and distribution could be achieved. Our experimental results revealed that the LEDs with this alternative p-type layer exhibited a higher quantum efficiency and reduced efficiency droop. We expect this approach to be equally applicable for deep-UV laser diodes and LEDs to replace the commonly used absorptive p-GaN layer.

Export citation and abstract BibTeX RIS

Access this article

The computer you are using is not registered by an institution with a subscription to this article. Please choose one of the options below.

Login

IOPscience login

Find out more about journal subscriptions at your site.

Purchase from

Article Galaxy
CCC RightFind

Purchase this article from our trusted document delivery partners.

Make a recommendation

To gain access to this content, please complete the Recommendation Form and we will follow up with your librarian or Institution on your behalf.

For corporate researchers we can also follow up directly with your R&D manager, or the information management contact at your company. Institutional subscribers have access to the current volume, plus a 10-year back file (where available).

Please wait… references are loading.
10.1088/1361-6641/aadc01