I–V characteristics of foilless diodes

Some physical characteristics of foilless diodes are obtained and analysed by numerical simulations. Relations between diode current and configuration parameters, i.e. diode voltage and external magnetic field, are investigated. Employing these relations and assuming that the external magnetic field is strong enough, the diode current can be approximately written as I_b = (7.5/x)(x+(0.81−x)/(1+0.7L_d²/δr))(γ₀^2/3−1)^3/2, in which L_d is the Anode–Cathode (AK) gap, R_c the outer radius of cathode and R_p the radius of drifting tube; x = ln (R_p/R_c), δr = R_p−R_c. This expression is comparatively accurate for different configuration parameters and voltages; results obtained from this expression are consistent with that of numerical simulations within an error of 10%.