Abstract
In the present work we report on the optimization of MBE growth conditions and design of metamorphic In(Al)(Ga)As/GaAs heterostructures. This results in a strong decrease in the density of threading dislocations in the upper (active) layers and the improvement of surface morphology. Room-temperature mobility in metamorphic modulation-doped InGaAs/InAlAs heterostructures was 8100 cm2 V−1 s−1, which is comparable to that of InP-based structures and noticeably superior to pseudomorphic GaAs-based structures.
InAs quantum dots formed in a metamorphic InGaAs matrix on a GaAs substrate were used for lasers with promising characteristics (emitting wavelengths of 1.46 µm, with threshold current densities of 1.4 kA cm−2).
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