Abstract
A non-linear model of solid-state amorphization (SSA) is proposed which takes into account the interaction of the structural elements of the amorphous phase via a stress field. For the experimental parameters which correspond to semiconductors undergoing SSA by high-pressure phase retention, we obtain the solution in the form of a self-sustaining wave with a constant velocity v. This solution exists in the region , where the critical velocity is controlled by the thermal and concentration diffusivities and . A simple scaling relation is proposed for : . It is found that the characteristic correlation length of the amorphous phase formed by SSA strongly depends on the interplay between the parameters v, and .
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