Abstract
The effects of the incorporation of Al into high-quality RF sputtered a-Ge:H are reported. Al-to-Ge atomic concentration ratios in the range 2.6*10-5-1.0*10-1 were studied. Samples with Al concentration below 1.0*10-2 present an increase of the activation energy decrease of both dark and photoconductivity and constant H content. This is interpreted as due to active p-type doping of the intrinsically n-type material. Al concentration above 1.0*10-2 are detrimental to the electronic quality of the samples, probably due to a high concentration of threefold coordinated Al.
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