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Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

G D Samolyuk et al 2006 J. Phys.: Condens. Matter 18 1473-1482   doi: 10.1088/0953-8984/18/4/030  Help

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G D Samolyuk, S L Bud'ko, E Morosan, V P Antropov and P C Canfield
Ames Laboratory US DOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA

Abstract. We present anisotropic, zero applied magnetic field, temperature-dependent resistivity measurements on hexagonal, non-magnetic YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, ρab, is significantly higher than the c-axis one, ρc, with ρabc≈1.4 for YPtIn and ≈4.2–4.7 for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.

Print publication: Issue 4 (1 February 2006)
Received 14 August 2005
Published 13 January 2006

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