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Electronic origin of shearing in M2AC (M = Ti,V,Cr,A = Al,Ga)

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Published 1 November 2005 IOP Publishing Ltd
, , Citation Zhimei Sun et al 2005 J. Phys.: Condens. Matter 17 7169 DOI 10.1088/0953-8984/17/46/001

0953-8984/17/46/7169

Abstract

We have studied shearing in M2AC (space group P63/mmc, prototype Cr2AlC), where M is Ti, V and Cr, and A is Al and Ga, using ab initio calculations. These compounds can be described as interleaved layers of MC and A. As Ti in Ti2AlC is substituted by V, c44 increases by 24.3%. Increasing the transition metal valence electron concentration further, through a substitution of V by Cr, results in 2.2% decrease of c44. The electronic origin of this c44 versus valence electron concentration dependence may be understood by analysing the decomposed band structure: in the vicinity of the Fermi level, we find two types of dd bonding. One contributes to shearing (t2g+eg symmetry or MC–MC coupling) and the other does not (eg symmetry). We provide evidence that filling of the transition metal dd bonding states with the t2g+eg symmetry may be responsible for the behaviour of c44. The results presented enable tailoring of the shear properties of M2AC phases.

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10.1088/0953-8984/17/46/001