MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion

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Published 4 April 2003 • Published under licence by IOP Publishing Ltd
, , Citation Susan L Murray et al 2003 Semicond. Sci. Technol. 18 S202 DOI 10.1088/0268-1242/18/5/309

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Author affiliations

1 Emcore Photovoltaics, Albuquerque, NM, USA

2 NASA Glenn Research Center, Cleveland, OH, USA

3 NREL, Golden, CO, USA

4 Bechtel Bettis, Inc., Pittsburgh, PA, USA

Dates

  1. Received 24 October 2002
  2. Published

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0268-1242/18/5/S202

Abstract

The details of MOCVD growth of lattice-matched (0.74 eV) and lattice-mismatched (0.55 eV and 0.6 eV) InGaAs-based thermophotovoltaic (TPV) devices on InP substrates are discussed. The optimization of growth conditions, structural parameters and run-to-run consistency have played a key role in the development of high quality TPV devices, particularly in the development of lattice-mismatched materials.

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10.1088/0268-1242/18/5/309