Abstract
The conduction band offset of the type II heterostructure CdS/ZnSe is determined from photoluminescence data of single quantum wells. The cubic quantum well samples have been grown by compound-source molecular-beam epitaxy. Photoluminescence spectra were measured at low temperatures and evaluated by fitting an effective mass model to the transition energies. A conduction band offset of (0.80±0.1) eV and an effective electron mass for cubic CdS of (0.18±0.05)m0 were determined.
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