Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

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Published 1 April 2005 • 2005 IOP Publishing Ltd
, , Citation Petru Lunca-Popa et al 2005 J. Phys. D: Appl. Phys. 38 1248 DOI 10.1088/0022-3727/38/8/023

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1 Center for Materials Research and Analysis, 116 Brace Laboratory, University of Nebraska, PO Box 880111, Lincoln, NE 68588-0111, USA

2 College of Engineering and Technology, N104 Walter Scott Engineering Center, 17th & Vine Streets, University of Nebraska-Lincoln, Lincoln, NE 68588-0656, USA

3 Department of Physics and Astronomy, Behlen Laboratory of Physics, University of Nebraska, PO Box 880111, Lincoln, NE 68588-0111, USA

4 Chemistry and Nanotechnology, Institute for Materials Research, Cockcroft Building, University of Salford, Salford M5 4WT, UK

5 Author to whom any correspondence should be addressed.

Dates

  1. Received 5 January 2005
  2. Published

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0022-3727/38/8/1248

Abstract

Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C2B10H12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C2B10 boron carbide and is consistent with electron diffraction results.

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10.1088/0022-3727/38/8/023