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1984 J. Phys. D: Appl. Phys. 17 L115-L117 doi: 10.1088/0022-3727/17/8/002 
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Abstract. A SiO2 layer deposited by RF sputtering at room temperature has been employed as an encapsulant for the diffusion of tin from spin-on sources. This encapsulant prevents cracking problems of SiO2 layers, removes the requirement for thermal ramping before diffusion, and thus increases the process reliability.
Print publication: Issue 8 (14 August 1984) |
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