Narrow-band charge transport in SnI₄

Transient photoconductivity techniques have been used to investigate carrier transport in SnI₄, a molecular solid. The hole drift mobility is equal to 2.2 cm² V^-1 S^-1 at 295 K and varies approximately as T^-4 over the temperature range 240 K to 370 K. This unusually rapid diminution with temperature is interpreted in terms of a nonlinear electron-phonon scattering process. It is estimated that the upper limit of the electron mobility is of order 10^-3 cm² V^-1 s^-1.