EPR of defects in silicon-on-insulator structures formed by ion implantation. II. N⁺ implantation

For pt.I see ibid., vol.19, p.6417 (1986). EPR measurements have been made of defects produced by implanting a (100) silicon wafer with a dose of 0.75*10¹⁸ cm^-2 200 keV N^- ions at an implantation temperature of about 520 degrees C. A single nearly isotropic line with g=2.0039+or-0.0002 and peak-to-peak linewidth 0.80+or-0.04 mT is observed. It is attributed almost entirely to silicon dangling bonds which lie mainly within a buried amorphous layer, 0.21 mu m thick, which is rich in nitrogen. The defect concentration, which has an initial value of about 4.5*10¹⁴ cm^-2, is measured as a function of etching time and annealing temperature.