Abstract
An experimental study was made of photosensitive metal-insulator-semiconductor structures in contact with a nematic liquid crystal. Utilization of the orientational electrooptic effect in the liquid crystal ensured a high energy sensitivity of a structure with gallium arsenide as the semiconductor. Modulation of the phase of light by π or attainment of the highest optical contrast (of the order of 100:1) was achieved when the minimum intensity of the exciting helium-neon laser radiation (λ=633 nm) was 5×10–7 W/cm2 and the switching energy was 10–8–10–9J/cm2. Spatial resolution was at least 10–12 lines/mm. A structure of this kind could be used for coupling in and conversion of optical data, including visualization of infrared radiation.