The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.
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2 May 2016
Research Article|
May 03 2016
Impacts of Co doping on ZnO transparent switching memory device characteristics
Firman Mangasa Simanjuntak
;
Firman Mangasa Simanjuntak
1Department of Materials Science and Engineering,
National Chiao Tung University
, Hsinchu 30010, Taiwan
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Om Kumar Prasad
;
Om Kumar Prasad
2Department of Electrical Engineering and Computer Science,
National Chiao Tung University
, Hsinchu 30010, Taiwan
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Debashis Panda
;
Debashis Panda
3Department of Electronics Engineering,
National Institute of Science and Technology
, Berhampur, Odisha 761008, India
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Chun-An Lin;
Chun-An Lin
4Department of Electronics Engineering and Institute of Electronics,
National Chiao Tung University
, Hsinchu 30010, Taiwan
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Tsung-Ling Tsai;
Tsung-Ling Tsai
4Department of Electronics Engineering and Institute of Electronics,
National Chiao Tung University
, Hsinchu 30010, Taiwan
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Kung-Hwa Wei;
Kung-Hwa Wei
1Department of Materials Science and Engineering,
National Chiao Tung University
, Hsinchu 30010, Taiwan
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Tseung-Yuen Tseng
Tseung-Yuen Tseng
a)
4Department of Electronics Engineering and Institute of Electronics,
National Chiao Tung University
, Hsinchu 30010, Taiwan
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Appl. Phys. Lett. 108, 183506 (2016)
Article history
Received:
November 21 2015
Accepted:
April 11 2016
Citation
Firman Mangasa Simanjuntak, Om Kumar Prasad, Debashis Panda, Chun-An Lin, Tsung-Ling Tsai, Kung-Hwa Wei, Tseung-Yuen Tseng; Impacts of Co doping on ZnO transparent switching memory device characteristics. Appl. Phys. Lett. 2 May 2016; 108 (18): 183506. https://doi.org/10.1063/1.4948598
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