We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.
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2 April 2012
Research Article|
April 06 2012
GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
E. P. Smakman;
E. P. Smakman
a)
1Department of Applied Physics,
Eindhoven University of Technology
, Eindhoven 5612 AZ, The Netherlands
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J. K. Garleff;
J. K. Garleff
1Department of Applied Physics,
Eindhoven University of Technology
, Eindhoven 5612 AZ, The Netherlands
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R. J. Young;
R. J. Young
2Department of Physics,
Lancaster University
, Lancaster LA1 4YB, United Kingdom
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M. Hayne;
M. Hayne
2Department of Physics,
Lancaster University
, Lancaster LA1 4YB, United Kingdom
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P. Rambabu;
P. Rambabu
1Department of Applied Physics,
Eindhoven University of Technology
, Eindhoven 5612 AZ, The Netherlands
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P. M. Koenraad
P. M. Koenraad
1Department of Applied Physics,
Eindhoven University of Technology
, Eindhoven 5612 AZ, The Netherlands
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a)
Electronic mail: e.p.smakman@tue.nl.
Appl. Phys. Lett. 100, 142116 (2012)
Article history
Received:
December 20 2011
Accepted:
March 22 2012
Citation
E. P. Smakman, J. K. Garleff, R. J. Young, M. Hayne, P. Rambabu, P. M. Koenraad; GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. Appl. Phys. Lett. 2 April 2012; 100 (14): 142116. https://doi.org/10.1063/1.3701614
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