Asymmetrical shift behaviors of capacitance-voltage (C-V) curve with opposite direction are observed in two AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructures with Pb(Zr,Ti)O3 and LiNbO3 gate dielectrics. By incorporating the switchable polar nature of the ferroelectric into a self-consistent calculation, the coupling effect between the ferroelectric and the interface charges is disclosed. The opposite initial orientation of ferroelectric dipoles determined by the interface charges is essentially responsible for the different C-V characteristics. A critical fixed charge density of −1.27 × 1013 cm−2 is obtained, which plays a key role in the dependence of the C-V characteristic on the ferroelectric polarization. The results pave the way for design of memory devices based on MFS structure with heteropolar interface.
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12 March 2012
Research Article|
March 13 2012
Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure
Min Zhang;
Min Zhang
1
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
, Nanjing 210016, China
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Yuechan Kong;
1
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
, Nanjing 210016, China
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Jianjun Zhou;
Jianjun Zhou
1
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
, Nanjing 210016, China
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Fangshi Xue;
Fangshi Xue
1
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
, Nanjing 210016, China
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Liang Li;
Liang Li
1
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
, Nanjing 210016, China
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Wenhai Jiang;
Wenhai Jiang
1
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
, Nanjing 210016, China
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Lanzhong Hao;
Lanzhong Hao
2
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China
, Chengdu 610054, China
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Wenbo Luo;
Wenbo Luo
2
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China
, Chengdu 610054, China
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Huizhong Zeng
Huizhong Zeng
2
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China
, Chengdu 610054, China
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a)
Electronic mail: kycfly@163.com. Fax: +86-25-86858133.
Appl. Phys. Lett. 100, 112902 (2012)
Article history
Received:
December 18 2011
Accepted:
February 28 2012
Citation
Min Zhang, Yuechan Kong, Jianjun Zhou, Fangshi Xue, Liang Li, Wenhai Jiang, Lanzhong Hao, Wenbo Luo, Huizhong Zeng; Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure. Appl. Phys. Lett. 12 March 2012; 100 (11): 112902. https://doi.org/10.1063/1.3694283
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