Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

Lin, C. A.; Chiu, H. C.; Chiang, T. H.; Lin, T. D.; Chang, Y. H.; Chang, W. H.; Chang, Y. C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T. Y.; Hong, M.; Kwo, J.

doi:10.1063/1.3566014

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Correction| March 11 2011

Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in ${In}_{0.2} {Ga}_{0.8} As$ by ${Ga}_{2} O_{3}$ $({Gd}_{2} O_{3})$ passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

C. A. Lin;

C. A. Lin

1Department of Physics,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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H. C. Chiu;

H. C. Chiu

2Department of Materials Science and Engineering,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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T. H. Chiang;

T. H. Chiang

2Department of Materials Science and Engineering,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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T. D. Lin;

T. D. Lin

2Department of Materials Science and Engineering,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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Y. H. Chang;

Y. H. Chang

2Department of Materials Science and Engineering,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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W. H. Chang;

W. H. Chang

2Department of Materials Science and Engineering,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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Y. C. Chang;

Y. C. Chang

2Department of Materials Science and Engineering,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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W.-E. Wang;

W.-E. Wang

3

Interuniversity Microelectronics Center (IMEC vzw)

, 3001 Leuven,

Belgium

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J. Dekoster;

J. Dekoster

3

Interuniversity Microelectronics Center (IMEC vzw)

, 3001 Leuven,

Belgium

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T. Y. Hoffmann;

T. Y. Hoffmann

3

Interuniversity Microelectronics Center (IMEC vzw)

, 3001 Leuven,

Belgium

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M. Hong;

M. Hong ^a)

2Department of Materials Science and Engineering,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

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J. Kwo

J. Kwo ^a)

1Department of Physics,

National Tsing Hua University

, Hsinchu 30013,

Taiwan

4Center for Condensed Matter Sciences,

National Taiwan University

, Taipei 10617,

Taiwan

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Author & Article Information

^a)

Authors to whom correspondence should be addressed. Electronic addresses: raynien@ntu.edu.tw and mhong@mx.nthu.edu.tw.

Appl. Phys. Lett. 98, 109901 (2011)

https://doi.org/10.1063/1.3566014

This letter was originally published online on 11 February 2011 with an error in J. Kwo’s name. The author’s name was correct in the printed version of the article. All online versions of the article were corrected on 15 February 2011. The author’s name appears correctly above.

View Original Article

2011

American Institute of Physics

Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in ${In}_{0.2} {Ga}_{0.8} As$ by ${Ga}_{2} O_{3}$ $({Gd}_{2} O_{3})$ passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

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Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]

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Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in ${In}_{0.2} {Ga}_{0.8} As$ by ${Ga}_{2} O_{3}$ $({Gd}_{2} O_{3})$ passivation” [Appl. Phys. Lett. 98, 062108 (2011)]