Two different types of dislocation arrangements have been observed in hydride vapor-phase epitaxial GaN films grown on sapphire substrates using both undoped and Si-doped GaN templates grown by metalorganic chemical vapor deposition: (i) predominantly straight threading dislocations parallel to the [0001] direction in the layer grown on an undoped template, and (ii) a network of interacting dislocations of edge, screw, and mixed character in the layer grown on a Si-doped template. The two types of defect distribution result in essentially different surface morphologies, respectively: (i) low-angle grain boundaries formed by pure edge dislocations around spiral grown hillocks, and (ii) smooth surface intersected by randomly distributed dislocations. The Si doping of the GaN templates was found to enhance defect interaction in the templates and to enable a reduction of the dislocation density in the overgrown thick GaN films, although it does not lead to an improvement of the overall structural properties of the material.
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15 November 2000
Research Article|
November 15 2000
Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
T. Paskova;
T. Paskova
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
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E. Valcheva;
E. Valcheva
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
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J. Birch;
J. Birch
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
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S. Tungasmita;
S. Tungasmita
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
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P. O. Å. Persson;
P. O. Å. Persson
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
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R. Beccard;
R. Beccard
Aixtron AG, D-52072 Aachen, Germany
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B. Monemar
B. Monemar
Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden
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J. Appl. Phys. 88, 5729–5732 (2000)
Article history
Received:
May 03 2000
Accepted:
August 15 2000
Citation
T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P. O. Å. Persson, R. Beccard, M. Heuken, B. Monemar; Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers. J. Appl. Phys. 15 November 2000; 88 (10): 5729–5732. https://doi.org/10.1063/1.1318366
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