This work focuses on the investigation of the difference between the photoresponse of ZnS, ZnSSe, and that of ZnSTe Schottky-barrier photodiodes, with a particular aim to reveal the underlying causes of the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky barrier photodiodes. To form the bottom electrode layer for the newly developed ZnSSe diode, n-type doping of ZnSSe by incorporating Al flux during molecular beam epitaxial growth was studied. Excellent-to-good dopant activation is achieved for Se composition up to 50%. The measured photoresponse of the diodes clearly indicates that the Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky-barrier photodiodes. The results also reveal that the ZnSSe diode, having a much better visible rejection power, is a more suitable choice for high-performance visible–blind ultraviolet detection applications.
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6 December 1999
Research Article|
December 06 1999
Photoresponse studies of ZnSSe visible–blind ultraviolet detectors: A comparison to ZnSTe detectors
I. K. Sou;
I. K. Sou
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Z. H. Ma;
Z. H. Ma
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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G. K. L. Wong
G. K. L. Wong
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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Appl. Phys. Lett. 75, 3707–3709 (1999)
Article history
Received:
July 12 1999
Accepted:
October 14 1999
Citation
I. K. Sou, Z. H. Ma, G. K. L. Wong; Photoresponse studies of ZnSSe visible–blind ultraviolet detectors: A comparison to ZnSTe detectors. Appl. Phys. Lett. 6 December 1999; 75 (23): 3707–3709. https://doi.org/10.1063/1.125436
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