Electronic properties of InN nanowires

Indium nitride nanowires (NWs) grown by a catalyst-free, vapor-solid method are shown to be high-purity, single-crystal hexagonal wurtzite and intrinsic $n$ type with uniform diameters that range from $70to150nm$ and lengths that vary between 3 and $30μm$⁠. Single NWs were fabricated into field-effect transistors and the electronic material parameters of the wires were extracted and are found to be identical to comparable bulk InN.