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High etch rates of poly-crystalline 3C-SiC films in magnetron enhanced CHF3 plasmas

High etch rates of poly-crystalline 3C-SiC films in magnetron enhanced CHF3 plasmas

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Magnetron enhanced reactive ion etching (RIE) of poly-crystalline 3C-SiC thin films grown on thermally oxidised Si substrates has been investigated in CHF3 plasmas. The magnetron enhanced RIE can stably etch the poly-crystalline 3C-SiC thin film at a lower ion energy (70 W) without any damage than can the commercial RIE system. The best vertical structure was improved by the addition of 40% O2 and 16% Ar with the CHF3 reactive gas.

Inspec keywords: sputter etching; semiconductor thin films

Other keywords: magnetron enhanced plasmas; 3C-SiC thin films; reactive ion etching

Subjects: Surface treatment (semiconductor technology); Semiconductor theory, materials and properties

References

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      • G.S. Chung , S.Y. Chung , S. Nishino . Reactive ion etching characteristics of 3C-SiC grown on Si wafers. J. Korean Inst. Met. Mater. , 7 , 724 - 728
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      • G.S. Chung , K.S. Kim , K.B. Han , J.H. Joeng . Growth of poly-crystalline 3C-SiC thin films using HMDS single precursor. J. Korean Inst. Met. Mater. , 2 , 156 - 161
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      • C.A. Zorman , M. Mehregany . Silicon carbide for MEMS and NEMS – an overview. Proc. IEEE , 1109 - 1114
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