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Ultra-wideband SiGe low-noise amplifier

Ultra-wideband SiGe low-noise amplifier

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© The Institution of Engineering and Technology
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A low-noise amplifier (LNA) for ultra-wideband (UWB) is presented. The LNA, consisting of two gain stages in multiple feedback loops, achieves a flat power gain of a nominal 20 dB and a noise figure of 2.8–4.7 dB over the 3.1–10.6 GHz UWB band. Implemented in a 0.25 µm SiGe BiCMOS process, the amplifier occupies 0.34 mm2 and draws 11 mA from a 2.7 V supply.

Inspec keywords: ultra wideband technology; Ge-Si alloys; MMIC amplifiers; wideband amplifiers; BiCMOS integrated circuits; low noise amplifiers

Other keywords: ultra-wideband low-noise amplifier; 2.7 V; BiCMOS process; UWB band; 3.1 to 10.6 GHz; noise figure; 0.25 micron; multiple feedback loops; LNA; 11 mA; 2.8 to 4.7 dB; SiGe

Subjects: Amplifiers; Microwave integrated circuits; Mixed technology integrated circuits

References

    1. 1)
      • Kipnis, I., Kukielka, J.F., Wholey, J., Snapp, C.P.: `Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz', IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1989, p. 101–104.
    2. 2)
      • Ismail, A., Abidi, A.: `A 3–10 GHz LNA with wideband LC ladder matching network', IEEE Int. Solid-State Circuits Conf. Tech. Dig., 2004, p. 384–385.
    3. 3)
    4. 4)
      • Foundry Technology 250-nm SiGe BiCMOS, Online: http://www.3.ibm.com/chips/techlib/techlib.nsf/products/BICMOS_6HP.
    5. 5)
      • Shi, B., Chia, Y.W.: `Design of a SiGe low-noise amplifier for 3.1–10.6 GHz ultra-wideband radio', Proc. IEEE Int. Symp. on Circuits and Systems, 2004, p. 101–104.
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