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Passive modelocking of InGaAsP/InP laser diode over wide operating temperature range

Passive modelocking of InGaAsP/InP laser diode over wide operating temperature range

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The passive modelocked operation of an InGaAsP/InP laser diode, with a novel design of adaptable saturable absorber, up to an operating temperature of 75°C, is reported. To the authors' best knowledge, this is the first demonstration of high-temperature operation of a passively modelocked laser diode. The effect of the operating temperature on the operating frequency and the tuning range is described.

Inspec keywords: indium compounds; gallium arsenide; laser tuning; semiconductor lasers; high-temperature techniques; laser mode locking; III-V semiconductors

Other keywords: operating temperature; 75 C; operating frequency; tuning range; adaptable saturable absorber; passive modelocking; high-temperature operation; laser diode; InGaAsP-InP

Subjects: Laser beam modulation, pulsing and switching; mode locking and tuning; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Semiconductor lasers

References

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      • Tan, W.K., Wong, H.Y., Lee, H.K., Bryce, A.C., Marsh, J.H.: `Wide operating temperature range of passively mode locked InGaAs/InGaAsP 1.55 µm quantum well lasers', 16thAnnual Meeting of the IEEE, 2003, 2, p. 824–825.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20053431
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