500 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator
500 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator
- Author(s): S. Kodama ; T. Yoshimatsu ; H. Ito
- DOI: 10.1049/el:20040391
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- Author(s): S. Kodama 1 ; T. Yoshimatsu 1 ; H. Ito 1
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View affiliations
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Affiliations:
1: NTT Photonics Laboratories, NTT Corporation, Atsugi-shi, Japan
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Affiliations:
1: NTT Photonics Laboratories, NTT Corporation, Atsugi-shi, Japan
- Source:
Volume 40, Issue 9,
29 April 2004,
p.
555 – 556
DOI: 10.1049/el:20040391 , Print ISSN 0013-5194, Online ISSN 1350-911X
Optical demultiplexing at a corresponding data rate of 500 Gbit/s has been achieved using an ultrafast monolithic optical gate integrating a photodiode and an electroabsorption modulator. The on/off ratio is 9 dB for adjacent channels and larger than 20 dB for other channels.
Inspec keywords: electro-optical modulation; integrated optoelectronics; demultiplexing; optical communication equipment; photodiodes; electroabsorption
Other keywords:
Subjects: Photoelectric devices; Integrated optoelectronics; Multiplexing and switching in optical communication
References
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