1550 nm-band VCSEL 0.76 mW singlemode output power in 20–80°C temperature range
1550 nm-band VCSEL 0.76 mW singlemode output power in 20–80°C temperature range
- Author(s): A. Syrbu ; A. Mereuta ; A. Mircea ; A. Caliman ; V. Iakovlev ; C.-A. Berseth ; G. Suruceanu ; A. Rudra ; E. Deichsel ; E. Kapon
- DOI: 10.1049/el:20040222
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- Author(s): A. Syrbu 1 ; A. Mereuta 1 ; A. Mircea 1 ; A. Caliman 2 ; V. Iakovlev 1 ; C.-A. Berseth 1 ; G. Suruceanu 1 ; A. Rudra 1 ; E. Deichsel 1 ; E. Kapon 1
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View affiliations
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Affiliations:
1: BeamExpress SA, Lausanne, Switzerland
2: Swiss Federal Institute of Technology, EPFL, Lausanne, Switzerland
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Affiliations:
1: BeamExpress SA, Lausanne, Switzerland
- Source:
Volume 40, Issue 5,
4 March 2004,
p.
306 – 307
DOI: 10.1049/el:20040222 , Print ISSN 0013-5194, Online ISSN 1350-911X
Wafer-fused InGaAlAs/AlGaAs vertical cavity surface emitting lasers with InAlGaAs-based tunnel junction injection have shown record high 0.7 mW singlemode output power in the 10–80°C temperature range. Single transverse-mode operation with 35 dB sidemode suppression and low divergence beam with 9° half width at half maximum has been measured on devices with 7 µm aperture.
Inspec keywords: aluminium compounds; semiconductor lasers; III-V semiconductors; gallium arsenide; surface emitting lasers; indium compounds; quantum well lasers
Other keywords:
Subjects: Laser resonators and cavities; Design of specific laser systems; Laser resonators and cavities; Lasing action in semiconductors; Semiconductor lasers
References
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