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Intersubband absorption at λ∼2.1 µm in A-plane GaN/AlN multiple quantum wells

Intersubband absorption at λ∼2.1 µm in A-plane GaN/AlN multiple quantum wells

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Intersubband optical absorption at λ∼2.1 µm wavelength in doped 17.5 Å wide GaN quantum wells (QWs) with 51 Å wide intermediate AlN barriers is reported. A ∼600 nm thick GaN template and 15 QWs have been grown by molecular beam epitaxy on R-plane sapphire substrate and display pure A-plane orientation. QWs with A-plane orientation are essentially free from spontaneous polarisation, which is expected to greatly simplify the design of GaN/Al(Ga)N devices employing intersubband transitions.

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      • F. Bernardini , V. Fiorentini , D. Vanderbuilt . Spontaneous polarization and piezoelectric constants of III–V nitrides. Phys. Rev. B , R10024 - 10027
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