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Estimation of signal-to-noise ratio improvement in RF-interconnect

Estimation of signal-to-noise ratio improvement in RF-interconnect

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RF-interconnect (RFI) can greatly improve the signal-to-noise ratio (SNR) in a high-speed digital interface system by separating the data and the noise in the frequency domain and suppressing the switching noise by the highpass channel characteristics. Experimental characterisation results are presented of a prototype multi-I/O RFI channel. The potential SNR improvement is estimated to be 10 dB compared to conventional digital interface systems. The improved system SNR can lead to enhanced data rate with reduced signalling level in RFI.

Inspec keywords: integrated circuit noise; integrated circuit interconnections; coplanar transmission lines; impedance matching; CMOS digital integrated circuits

Other keywords: enhanced data rate; RF-interconnect; highpass channel characteristics; 1 to 40 GHz; switching noise suppression; frequency domain; impedance-matched transmission line; prototype multi-I/O RF interconnect channel; coplanar waveguide; reduced signalling level; signal-to-noise ratio improvement estimation; data noise separation; scaled CMOS technology; high-speed digital interface system

Subjects: Metallisation and interconnection technology; Distributed linear networks; CMOS integrated circuits; Digital circuit design, modelling and testing

References

    1. 1)
      • M.F. Chang , V. Roychowdhury , L. Zhang , H. Shin , Y. Qian . RF/wireless interconnect for inter- and intra-chip communications. Proc. IEEE , 456 - 466
    2. 2)
      • Shin, H., Xu, Z., Chang, M.F.: `RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18 µm CMOS', IEEE MTT-S Int. Microwave Symp., June 2002, Seattle, WA, USA, p. 477–480.
    3. 3)
    4. 4)
      • M. Hedberg , T. Haulin . I/O family with 200 mV to 500 mV supply voltage. Dig. Tech. Pap. – IEEE Int. Solid-State Circuits Conf. , 340 - 341
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