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Modal refractive index of 1.3 lµm InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure

Modal refractive index of 1.3 lµm InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure

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The accurate experimental determination of the modal refractive index of 1.3 µm InGaAsP, AlGaInAs and GaInNAs multiple quantum-well lasers by measuring the longitudinal mode separation up to a pressure of 15 kbar is reported for the first time. A small increase of the indices is observed for the three materials with increasing pressure, which causes a decrease of lasing wavelength.

Inspec keywords: quantum well lasers; laser modes; gallium compounds; III-V semiconductors; indium compounds; laser transitions; gallium arsenide; aluminium compounds; refractive index measurement

Other keywords: multiple quantum-well lasers; accurate experimental determination; GaInNAs; 15 kbar; modal refractive index; 1.3 micron; InGaAsP; pressure; longitudinal mode separation; lasing wavelength; increasing pressure; refractive index measurement; semiconductor lasers; AlGaInAs; high hydrostatic pressure

Subjects: Design of specific laser systems; Semiconductor lasers; Optical variables measurement; Lasing action in semiconductors; Optical refractometry and reflectometry

References

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      • J. Manning , R. Olshansky . Carrier-induced index change in AlGaAs double-heterostructure lasers. Electron. Lett. , 506 - 507
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      • A.F. Phillips , S.S. Sweeney , A.R. Adams , P.J.A. Thijs . The temperature dependence of 1.3- and 1.5-µm compressively strained InGaAs(P) MQW semiconductor lasers. IEEE J. Select. Top. Quantum Electron. , 401 - 412
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