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Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

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The gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regions. Analysis of experimental data for different transistors indicates that for all examined biases the noise spectrum is dominated by the channel noise rather than noise originating in the series resistors. The obtained results shed new light on the noise sources and may lead to improvements in the noise performance of GaN transistors.

References

    1. 1)
      • A. Balandin , S. Cai , R. Li , K.L. Wang , V. Ramgopal Rao , C.R. Viswanathan . Flicker noise in GaN/Al0.15Ga0.85N doped channel heterostructurefield effect transistors. IEEE Electron Device Lett. , 475 - 477
    2. 2)
      • A. Balandin , S. Morozov , G. Wijeratne , S.J. Cai , R. Li , J. Li , K.L. Wang , C.R. Viswanathan , Yu. Dubrovskii . Effect of channel doping on the low-frequency noisein GaN/AlGaN heterostructure field-effect transistors. Appl. Phys. Lett. , 2064 - 2066
    3. 3)
      • S.J. Cai , R. Li , Y.L. Chen , L. Wong , W.G. Wu , S.G. Thomas , K.L. Wang . High performance AlGaN/GaN HEMT with improved ohmic contacts. Electron Lett. , 2354 - 2356
    4. 4)
      • M.E. Levinshtein , S.L. Rumyantsev , R. Gaska , J.W. Yang , M.S. Shur . AlGaN/GaN high electron mobility field effect transistors with low 1/fnoise. Appl. Phys. Lett. , 1089 - 1091
    5. 5)
      • S.L. Rumyantsev , M.E. Levinshtein , R. Gaska , M.S. Shur , A. Khan , J.W. Yang , G. Simin , A. Ping , T. Adesida . Low 1/f noise in AlGaN/GaN HFETs on SiC substrates. Phys. Stat. Sol. (a) , 201 - 204
    6. 6)
      • J. Chang , A.A. Abidi , C.R. Viswanathan . Flicker noise in CMOS transistors fromsubthreshold to strong inversion at various temperatures. IEEE Trans. , 1965 - 1971
    7. 7)
      • Discussion at 2000 Workshop on Compound Semiconductor MaterialsandDevices(WOCSEMMAD'00), San Diego, California, February 23, 2000.
    8. 8)
      • J.-M. Peransin , P. Vignaud , D. Rigaud , L.K.J. Vandamme . 1/f noise in MODFET's at low drain bias. IEEE Trans. , 2250 - 2253
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