Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800°C
Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800°C
- Author(s): P.J. Hughes ; A.P. Knights ; B.L. Weiss ; S. Ojha
- DOI: 10.1049/el:20000367
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- Author(s): P.J. Hughes 1 ; A.P. Knights 1 ; B.L. Weiss 1 ; S. Ojha 2
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View affiliations
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Affiliations:
1: School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, United Kingdom
2: School of Electronic Engineering, Information Technology and Mathematics, NORTEL Technology, Harlow, United Kingdom
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Affiliations:
1: School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, United Kingdom
- Source:
Volume 36, Issue 5,
2 March 2000,
p.
427 – 428
DOI: 10.1049/el:20000367 , Print ISSN 0013-5194, Online ISSN 1350-911X
An experimental study of the absorption, refractive index and UV photosensitivity of proton implanted Ge-doped planar glass waveguides has shown that the defects induced by implantation at 800°C were photobleached after UV exposure and that self-annealing occurred.
Inspec keywords: ion implantation; annealing; optical planar waveguides; refractive index; germanium; optical glass; optical saturable absorption; ultraviolet spectra; silicon compounds; noncrystalline defects
Other keywords:
Subjects: Optical glass; Visible and ultraviolet spectra of other nonmetals; Optical materials; Integrated optics; Optical constants and parameters (condensed matter); Annealing processes; Optical saturation and related effects; Doping and implantation of impurities; Optical waveguides and couplers; Optical transient phenomena, self-induced transparency, optical saturation and related effects; Integrated optics; Optical waveguides
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