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Effect of atmosphere on reliability of passivated 0.15 µm InAlAs/InGaAs HEMTs

Effect of atmosphere on reliability of passivated 0.15 µm InAlAs/InGaAs HEMTs

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The influence of ambient atmosphere on the long term stability of InP-based HEMTs has been investigated. By performing accelerated stress tests at elevated temperature the authors found that the electrical parameter drift is much faster in air than in nitrogen. The importance of a stabilisation bake in nitrogen after the fabrication process is demonstrated.

Inspec keywords: life testing; aluminium compounds; gallium arsenide; semiconductor device reliability; high electron mobility transistors; passivation; III-V semiconductors; indium compounds

Other keywords: stabilisation bake; 0.15 micron; InP substrate; stability; accelerated stress test; InP; reliability; ambient atmosphere; electrical parameter drift; passivation; fabrication; InAlAs/InGaAs HEMT; InAlAs-InGaAs

Subjects: Reliability; Surface treatment and coating techniques; Testing; Surface treatment (semiconductor technology); Other field effect devices; Maintenance and reliability

References

    1. 1)
      • Hwang, K.C., Reisinger, A.R., Duh, K.H.G., Kao, M.Y., Chao, P.C., Ho, P., Swanson, A.W.: `A reliable ECR passivation technique on the 0.1 µmInAlAs/InGaAs HEMT device', IPRM'94 Conf. Proc., 1994, p. 624–627.
    2. 2)
      • T. Enoki , H. Ito , Y. Ishii . Reliability study of InAlAs/InGaAs HEMTs with arecess-etch stopper and refractory gate metal. Solid-State Electron. , 10 , 1651 - 1656
    3. 3)
      • Hafizi, M., Delaney, M.J.: `Reliability of InP-based HBT's and HEMT's:experiments, failure mechanisms, and statistics', IPRM'94 Conf. Proc., 1994, p. 299–302.
    4. 4)
      • Chertouk, M., Steinhagen, F., Massler, H., Dammann, M., Haydl, W.H., Köhler, K., Weimann, G.: `W-band high gain passivated 0.15 µm InP-basedHEMTs MMIC technology with high thermal stability on InP substrates', IPRM'98 Conf. Proc., 1998, p. 227–230.
    5. 5)
      • Y. Yamamoto , N. Hayafuji , N. Fujii , K. Kadoiwa , N. Yoshida , T. Sonoda , S. Takamiya . Donor passivation in n-AllnAs layers by fluorine. J. Electron. Mater. , 685 - 690
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19981383
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