Advantages of Al-free GalnP/lnGaAs PHEMTs for power applications
The performance and temperature stability of Al-free GaInAs/GaAs PHEMTs with GaInP as a Schottky barrier is reported. GaInP/GaInAs/GaAs PHEMTs with a 1 µm gate length show an fmax value of 76 GHz with a maximum drain current of 570 mA/mm and a drain-source breakdown voltage of 16 V. Moreover, the first results on short gate length devices (0.15 µm) yield fT and fmax values of 106 and 203 GHz, respectively. In this case, the drain-source breakdown voltage is as high as 8 V. These results demonstrate the great potential of GaInP/GaInAs PHEMTs for power applications.
