High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode
High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode
- Author(s): Y. Muramoto ; K. Kato ; M. Mitsuhara ; O. Nakajima ; Y. Matsuoka ; N. Shimizu ; T. Ishibashi
- DOI: 10.1049/el:19980054
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- Author(s): Y. Muramoto 1 ; K. Kato 1 ; M. Mitsuhara 1 ; O. Nakajima 1 ; Y. Matsuoka 1 ; N. Shimizu 2 ; T. Ishibashi 2
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View affiliations
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Affiliations:
1: NTT Opto-electronics Laboratories, Atsugi, Japan
2: NTT System Electronics Laboratories, Atsugi, Japan
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Affiliations:
1: NTT Opto-electronics Laboratories, Atsugi, Japan
- Source:
Volume 34, Issue 1,
8 January 1998,
p.
122 – 123
DOI: 10.1049/el:19980054 , Print ISSN 0013-5194, Online ISSN 1350-911X
A uni-travelling-carrier structure is applied to the high speed, high efficiency waveguide pin photodiode with the aim of increasing the maximum available output voltage. With a 50 Ω load, a photodiode having an external quantum efficiency of 32% yields an output voltage of 1.3 V with a bandwidth of 55 GHz, and 0.45 V with a bandwidth of 70 GHz.
Inspec keywords: p-i-n photodiodes; photodetectors; optical waveguides
Other keywords:
Subjects: Photoelectric devices; Photodetectors; Optical waveguides
References
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