6 W CW front-facet power from short-cavity (0.5 mm), 100 µm stripe Al-free 0.98 µm-emitting diode lasers
6 W CW front-facet power from short-cavity (0.5 mm), 100 µm stripe Al-free 0.98 µm-emitting diode lasers
- Author(s): D. Botez ; L.J. Mawst ; A. Bhattacharya ; J. Lopez ; J. Li ; T.F. Kuech ; V.P. Iakovlev ; G.I. Suruceanu ; A. Caliman ; A.V. Syrbu ; J. Morris
- DOI: 10.1049/el:19971390
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- Author(s): D. Botez 1 ; L.J. Mawst 1 ; A. Bhattacharya 1 ; J. Lopez 1 ; J. Li 1 ; T.F. Kuech 1 ; V.P. Iakovlev 2 ; G.I. Suruceanu 2 ; A. Caliman 2 ; A.V. Syrbu 2 ; J. Morris 3
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View affiliations
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Affiliations:
1: Reed Center for Photonics, University of Wisconsin-Madison, Madison, USA
2: Reed Center for Photonics, Technical University of Moldova, Chisinau, Moldova
3: Reed Center for Photonics, LDX Optronics Inc., Maryville, USA
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Affiliations:
1: Reed Center for Photonics, University of Wisconsin-Madison, Madison, USA
- Source:
Volume 33, Issue 24,
20 November 1997,
p.
2037 – 2039
DOI: 10.1049/el:19971390 , Print ISSN 0013-5194, Online ISSN 1350-911X
100 µm stripe, 500 µm long InGaAs/InGaP/GaAs facet-coated diode lasers of low series resistance Rs (0.09 Ω) emit up to 6 W CW output power from their front facets. Comparison with previously published data indicates that for low Rs (≤ 0.10 Ω) devices, the internal power density at catastrophic optical-mirror damage (P̄COMD) is independent of device length, agreeing closely with theory.
Inspec keywords: III-V semiconductors; indium compounds; gallium compounds; laser cavity resonators; semiconductor lasers; gallium arsenide
Other keywords:
Subjects: Laser resonators and cavities; Lasing action in semiconductors; Laser resonators and cavities; Semiconductor lasers; Design of specific laser systems
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