Optically pumped, monolithic, all-epitaxial 1.56 µm vertical cavity surface emitting laser using Sb-based reflectors
Optically pumped, monolithic, all-epitaxial 1.56 µm vertical cavity surface emitting laser using Sb-based reflectors
- Author(s): O. Blum ; J.F. Klem ; K.L. Lear ; G.A. Vawter ; S.R. Kurtz
- DOI: 10.1049/el:19971284
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- Author(s): O. Blum 1 ; J.F. Klem 1 ; K.L. Lear 2 ; G.A. Vawter 1 ; S.R. Kurtz 1
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View affiliations
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Affiliations:
1: Dept. 1312, MS0603, Sandia National Laboratories, Albuquerque, USA
2: Dept. 1312, MS0603, Microoptical Devices Inc., Albuquerque, USA
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Affiliations:
1: Dept. 1312, MS0603, Sandia National Laboratories, Albuquerque, USA
- Source:
Volume 33, Issue 22,
23 October 1997,
p.
1878 – 1880
DOI: 10.1049/el:19971284 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors demonstrate, for the first time, 77 K CW operation of an optically pumped, monolithic, all-epitaxial vertical cavity laser, emitting at 1.56 µm. The laser incorporates 15 and 20 period Al0.12Ga0.88As0.56Sb0.44/AlAs0.56Sb0.44 distributed Bragg reflectors for the top and bottom mirrors, respectively. The entire structure was grown in a single growth run by molecular beam epitaxy.
Inspec keywords: semiconductor growth; molecular beam epitaxial growth; III-V semiconductors; distributed Bragg reflector lasers; semiconductor epitaxial layers; aluminium compounds; gallium arsenide; optical pumping; surface emitting lasers
Other keywords:
Subjects: Semiconductor lasers; Lasing action in semiconductors; Design of specific laser systems; Vacuum deposition; Laser resonators and cavities; Laser resonators and cavities; Epitaxial growth
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