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High performance InP-based heterostructure barrier varactors in single and stack configuration

High performance InP-based heterostructure barrier varactors in single and stack configuration

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Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As blocking conduction layers have been fabricated and characterised. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm2 at 12 V, a zero bias capacitance of 1 fF/µm2, and a capacitance ratio of 5:1.

Inspec keywords: III-V semiconductors; indium compounds; varactors

Other keywords: leakage current; capacitance ratio; AlAs-In0.52Al0.48As; electrical properties; stack configuration; blocking conduction layer; single heterostructure barrier varactor; SHBV; zero bias capacitance; DHBV; 12 V; dual heterostructure barrier varactor; InP

Subjects: Junction and barrier diodes; Capacitors

References

    1. 1)
      • V.K. Reddy , D.P. Neikirk . High breakdown voltage AlAs/InGaAs quantum barrier varactor diodes. Electron. Lett. , 5 , 464 - 466
    2. 2)
      • A. Rahal , E. Boch , C. Rogers , J. Ovey , R.G. Bosisio . Planar multi-stack quantum barrier varactor tripler evaluation at W-band. Electron. Lett. , 23 , 2022 - 2023
    3. 3)
      • K. Krishnamurthi , S.M. Nilsen , R.G. Harrison . GaAs Single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance. IEEE Trans. on Microw. Theory Tech. , 12 , 2512 - 2516
    4. 4)
      • P. Mounaix , E. Lheurette , F. Mollot , D. Lippens . Frequency capability of strained AlAs/InGaAs resonant tunnelling diodes. Electron. Lett. , 17 , 1508 - 1510
    5. 5)
      • S.M. Sze , G. Gibbons . Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs, and GaP. Appl. Phys. Lett. , 5 , 111 - 113
    6. 6)
      • E.L. Kollberg , A. Rydberg . Quantum barrier varactor diode for high efficiency millimetre-wave multipliers. Electron. Lett. , 25 , 1696 - 1698
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