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Low-frequency dispersion characteristics of GaN HFETs

Low-frequency dispersion characteristics of GaN HFETs

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The low-frequency transconductance and output resistance of AlN/GaN HFETs have been examined as functions of temperature. Dispersive characteristics were found which are indicative of trapping activity in the GaN channel layer. Traps with an activation energy near 1 eV were evident.

Inspec keywords: gallium compounds; electron traps; wide band gap semiconductors; aluminium compounds; III-V semiconductors; junction gate field effect transistors

Other keywords: transconductance; AlN-GaN; activation energy; output resistance; traps; low-frequency dispersion; AlN/GaN HFETs

Subjects: Other field effect devices

References

    1. 1)
      • B.L. Gregory , S.S. Naik , W.G. Oldham . Neutron produced trapping centers in junction field-effect transistors. IEEE Trans. Nucl. Sci. , 6 , 50 - 59
    2. 2)
      • Binari, S.C., Rowland, L.B., Kelner, G., Kruppa, W., Dietrich, H.B., Doverspike, K., Gaskill, D.K.: `DC, microwave, and high-temperature characteristics of GaN FET structures', Inst. Phys. Conf. Ser. No. 141, 1995, p. 459–462.
    3. 3)
      • S.C. Binari , L.B. Rowland , W. Kruppa , G. Kelner , K. Doverspike , D.K. Gaskill . Microwave performance of GaN MESFETs. Electron. Lett. , 15 , 1248 - 1249
    4. 4)
      • M.A. Khan , J.N. Kuznia , D.T. Olson , W.J. Schaff , J.W. Burm , M.S. Shur . Microwave performance of a 0.25 µm gate AlGaN/GaN heterostructurefield-effect transistor. Appl. Phys. Lett. , 9 , 1121 - 1123
    5. 5)
      • Rowland, L.B., Doverspike, K., Gaskill, D.K., Freitas, J.A.: `Effect of aluminium nitride buffer layer temperature on gallium nitridegrown by OMVPE', Material Research Society Symp. Proc. on Diamond, SiC, and NitrideWide-Bandgap Semiconductors, 1994, 339, p. 477–482.
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