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Crystal silicon Fabry-Perot cavities deposited with dichlorosilane in a reduced pressure chemical vapour deposition reactor for thermal sensing

Crystal silicon Fabry-Perot cavities deposited with dichlorosilane in a reduced pressure chemical vapour deposition reactor for thermal sensing

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A surface-normal Fabry-Perot (FP) thermal sensor with embedded multiple QW dielectric mirrors, was fabricated and evaluated using a single crystal merged silicon epitaxial lateral overgrowth (MELO) technique. The sensitivity of the sensor has been improved owing to the higher finesse.

References

    1. 1)
      • J.J. Pak , G.W. Neudeck , A.E. Kabir , D.W. Deroo , S.E. Staller , J.H. Logsdon . A new method of forming a thin single-crystal silicon diaphragm usingmerged epitaxial lateralovergrowth for sensor applications. IEEE Electron Device Lett. , 11 , 614 - 616
    2. 2)
      • C.K. Subramanian , G.W. Neudeck . Large area silicon on insulator by double-merged epitaxial lateral overgrowth. J. Vac. Sci. Technol. B , 2 , 643 - 647
    3. 3)
      • M. Afromowitz . Refractive index of Ga1-xAlxAs. Solid State Commun. , 1 , 59 - 63
    4. 4)
      • J.J. Dudley , D.L. Crawford , J.E. Bowers . Temperature dependence of the properties of DBR mirrors used in surfacenormal optoelectronic devices. IEEE Photonics Technol Lett. , 4 , 311 - 314
    5. 5)
      • O. Zucker , W. Langheinrich , J. Meyer . The effect of process parameter variation on polysilicon temperaturetransducer characteristics. Sens. Actuators A , 419 - 422
    6. 6)
      • H.C. Chao , G.W. Neudeck . Polysilicon Fabry-Perot cavities deposited with dichlorosilane in a reducedpressure chemical vapourdeposition reactor for thermal sensing. Electron. Lett. , 1 , 80 - 81
    7. 7)
      • S.H. Wemple , M. DiDomenico . Behavior of the electronic dielectric constant in covalent and ionicmaterials. Phys. Rev. B , 4 , 1338 - 1351
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