Submicrometre gate length scaling of inversion channel heterojunction field effect transistor
Submicrometre gate length scaling of inversion channel heterojunction field effect transistor
- Author(s): P.A. Kiely ; T.A. Vang ; M. Micovic ; A. Lepore ; G.W. Taylor ; R. Malik ; D.P. Docter ; P.A. Evaldsson ; P.R. Claisse ; K.F. Brown-Goebeler ; F. Storz
- DOI: 10.1049/el:19940354
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- Author(s): P.A. Kiely 1 ; T.A. Vang 1 ; M. Micovic 2 ; A. Lepore 3 ; G.W. Taylor 1 ; R. Malik 2 ; D.P. Docter 1 ; P.A. Evaldsson 1 ; P.R. Claisse 1 ; K.F. Brown-Goebeler 1 ; F. Storz 1
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View affiliations
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Affiliations:
1: AT&T Bell Laboratories, Holmdel, USA
2: AT&T Bell Laboratories, Murray Hill, USA
3: Army Research Laboratories, Fort Monmouth, USA
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Affiliations:
1: AT&T Bell Laboratories, Holmdel, USA
- Source:
Volume 30, Issue 6,
17 March 1994,
p.
529 – 531
DOI: 10.1049/el:19940354 , Print ISSN 0013-5194, Online ISSN 1350-911X
The scaling to 0.5 µm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm = 205 mS/mm and VTH = –0.34 V have been obtained for 0.5 × 100 µm2 devices. For shorter gate lengths, threshold shifts are sizeable so that in order to scale further, modifications to the growth and processing are required.
Inspec keywords: gallium arsenide; solid-state microwave devices; indium compounds; III-V semiconductors; integrated optoelectronics; high electron mobility transistors
Other keywords:
Subjects: Integrated optoelectronics; Solid-state microwave circuits and devices; Other field effect devices
References
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