Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

First demonstration of 60 GHz-fT, GaInP/GaAs HBT IC technology with 28 ps ECL gate delay

First demonstration of 60 GHz-fT, GaInP/GaAs HBT IC technology with 28 ps ECL gate delay

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an fT and fmax of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained from ring oscillator measurements. A divide-by-eight prescaler circuit clocks at 12.5 GHz.

Inspec keywords: gallium arsenide; indium compounds; heterojunction bipolar transistors; gallium compounds; emitter-coupled logic; integrated circuit technology; bipolar integrated circuits

Other keywords: MIM capacitors; 60 GHz; ring oscillator measurements; Schottky diodes; GaInP-GaAs; HBT IC process; divide-by-eight prescaler circuit; air-bridge inductors; ECL gate delay; 45 GHz; 28 ps; nichrome resistors

Subjects: Semiconductor technology; Logic circuits; Bipolar integrated circuits

References

    1. 1)
      • M.J. Mondry , H. Kroemer . Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy. IEEE Electron Device Lett. , 4 , 175 - 177
    2. 2)
      • T. Lauterbach . GaAs bipolar transistors with GaInP hole barrier layer and carbon-doped base grown by MOVPE. IEEE Trans. , 4 , 753 - 756
    3. 3)
      • F. Alexandre , J.L. Benchimol , J. Dangla , C. Dubon-Chevallier , V. Amarger . Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy. Electron. Lett. , 21 , 1753 - 1754
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19930218
Loading

Related content

content/journals/10.1049/el_19930218
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address