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Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies

Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies

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© The Institution of Electrical Engineers
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The microwave noise performance of Si/SiGe double-heterojunction bipolar transistors has been evaluated on-wafer, for frequencies ranging from 2 to 26GHz. Noise figures of 0.6 dB at 2GHz and 1.2dB at 10GHz were found to be among the lowest reported for bipolar transistors in general.

Inspec keywords: solid-state microwave devices; heterojunction bipolar transistors; electron device noise; elemental semiconductors; Ge-Si alloys; silicon; semiconductor materials

Other keywords: heterojunction bipolar transistors; 1.2 dB; semiconductor materials; Si-SiGe; microwave noise performance; elemental semiconductors; 0.6 dB; double-heterojunction; microwave frequencies; 2 to 26 GHz

Subjects: Solid-state microwave circuits and devices; Bipolar transistors

References

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      • R.J. Hawkins . Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure. Solid-State Electron. , 191 - 196
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      • Y.-K. Chen , R.N. Nottenburg , M.B. Panish , R.A. Hamm , D.A. Humphrey . Microwave noise performance of InP/InGaAs heterostructure bipolar transistors. IEEE Electron. Device Lett. , 470 - 472
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      • H. Kibbel , E. Kasper , P. Narozny , H.-U. Schreiber . Boron doping of Si-Ge base of heterobipolar transistors. Thin Solid Films
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      • A. Gruhle , H. Kibbel , U. König , U. Erben , E. Kasper . MBE-grown Si/SiGe HBTs with high β,fT and fmax. IEEE Electron. Device Lett.
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