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GaAs/GaAlAs multiquantum well waveguides for all-optical switching at 1.55 μm

GaAs/GaAlAs multiquantum well waveguides for all-optical switching at 1.55 μm

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© The Institution of Electrical Engineers
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The first measurements of selfphase modulation and nonlinear absorption in a GaAs/GaAlAs multiquantum well (MQW) waveguide near the half-bandgap resonance are reported. An intensity-dependent refractive index coefficient n2 of 9×10−14 cm2/W and a two-photon absorption coefficient of 0.15 cm/GW at 1.55 μm wavelength for TM light were obtained. This corresponds to an intensity-independent figure of merit of 24 rad phase change in one nonlinear absorption length, high enough to allow the implementation of subpicosecond all-optical switches at 1.55 μm wavelength.

Inspec keywords: III-V semiconductors; optical waveguides; nonlinear optics; aluminium compounds; optical switches; integrated optics; semiconductor quantum wells; gallium arsenide; optical modulation

Other keywords: two-photon absorption coefficient; TM light; III-V semiconductors; multiquantum well waveguides; all-optical switching; GaAs-GaAlAs; nonlinear absorption; intensity-dependent refractive index coefficient; selfphase modulation; half-bandgap resonance; subpicosecond all-optical switches; 1.55 micron

Subjects: Optical waveguides and couplers; Optical bistability, multistability and switching; Integrated optics; Nonlinear optics and devices; Optical waveguides; Integrated optics

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