Temperature-dependent gain and noise of 1.5 μm laser amplifiers
Temperature-dependent gain and noise of 1.5 μm laser amplifiers
- Author(s): B. Mikkelsen ; D.S. Olesen ; K.E. Stubkjaer ; Z. Wang ; A.J. Collar ; G.D. Henshall
- DOI: 10.1049/el:19890248
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Thank you
Your recommendation has been sent to your librarian.
- Author(s): B. Mikkelsen 1 ; D.S. Olesen 1 ; K.E. Stubkjaer 1 ; Z. Wang 1 ; A.J. Collar 2 ; G.D. Henshall 2
-
-
View affiliations
-
Affiliations:
1: Electromagnetics Institute, Technical University of Denmark, Lyngby, Denmark
2: Electromagnetics Institute, STC Technology Ltd, Harlow, UK
-
Affiliations:
1: Electromagnetics Institute, Technical University of Denmark, Lyngby, Denmark
- Source:
Volume 25, Issue 5,
2 March 1989,
p.
357 – 359
DOI: 10.1049/el:19890248 , Print ISSN 0013-5194, Online ISSN 1350-911X
The variations of gain and noise figure with temperature are investigated for a 1.5 μm laser amplifier with angled facets. The gain is decreasing by 4–8 dB for a temperature increase of 20°C and the noise figure is increasing by 2–4 dB. For both parameters the variation is smallest on the high wavelength side of the gain peak.
Inspec keywords: semiconductor junction lasers; gallium arsenide; indium compounds; III-V semiconductors; optical communication equipment
Other keywords:
Subjects: Optical communication; Semiconductor lasers; II-VI and III-V semiconductors
References
-
-
1)
- M.G. Oberg , N.A. Olsson . Wavelength dependence of noise figure of a travelling-wave GaInAsPI/nP laser amplifier. Electron. Lett. , 99 - 100
-
2)
- A.P. Mozer , S. Mausser , M.M. Pilkuhn . Quantitative evaluation of gain and losses in quarternary lasers. IEEE J. Quantum Electron. , 719 - 725
-
3)
- R. Olshansky , C.B. Su , J. Manning , W. Powazinik . Measurement of radiative and nonradiative recombination rates in InGaAsPand AlGaAs light sources. IEEE J. Quantum Electron. , 838 - 854
-
4)
- Zah, C.E., Way, W.I., Caneau, C., Menocal, S.G., Shokoohi, F.K., Favire, F., Lee, T.P.: `1.3-μm facet-angled and antireflection-coated near travelling-wave laser amplifiers and their application in a subcarrier multiplexed optical system', Tech. Dig. of 11th IEEE Int Semiconductor Laser Conference, 1988, PD7.
-
5)
- J.C. Simon . Semiconductor laser amplifier for single mode optical fiber communications. J. Opt. Comm. , 51 - 62
-
6)
- Wang, J.W., Olesen, H., Stubkjaer, K.E.: `Recombination, gain, and bandwidth characteristics of 1.3-μm semiconductor laser amplifiers', Tech. Dig. IOOC-ECO-C '85, 1–4 October 1985, Venezia, Italy, 1, p. 157–160.
-
7)
- T. Mukai , T. Saitoh . 5.2 dB noise figure in a 1.5 μm InGaAsP travelling-wave laser amplifier. Electron. Lett. , 216 - 218
-
8)
- Collar, A.J., Henshall, G.D., Moule, D.J., Mikkelsen, B., Zheng, W., Stubkjaer, K.E.: `Fabrication and performance of λ=1.5 μm angle facet laser amplifiers', Post-deadline paper PD6, Tech. Dig. of 11th IEEE Int. Semiconductor Laser Conference, 29th August–1st September 1988, Boston.
-
1)
Related content
