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Wavelength uniformity of 1.3 μm GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth

Wavelength uniformity of 1.3 μm GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth

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© The Institution of Electrical Engineers
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We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (σ ∼ 27 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.

Inspec keywords: III-V semiconductors; gallium compounds; optical communication equipment; gallium arsenide; vapour phase epitaxial growth; distributed Bragg reflector lasers; indium compounds; semiconductor growth; semiconductor junction lasers; laser transitions

Other keywords: WDM applications; wavelength uniformity; InP:Fe lateral current blocking; distributed Bragg reflector lasers; 1.3 micron; III-V semiconductors; DBR lasers; hybrid beam/vapour epitaxial growth; metal-organic chemical vapour deposition; chemical beam epitaxy; semiconductor lasers; optical communication equipment; GaInAsP-InP; MOCVD

Subjects: Semiconductor lasers; Chemical vapour deposition; Optical communication devices, equipment and systems; Vacuum deposition; Lasing action in semiconductors; Epitaxial growth; Optical communication; Design of specific laser systems

References

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      • U. Koren , B.I. Miller , G. Eisenstein , R.S. Tucker , G. Raybon , R.J. Capik . Semi-insulating blocked planer BH GalnAsP/InP laser with high power and high modulation bandwidth. Electron. Lett. , 138 - 140
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