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1 THz-bandwidth proper for high-speed devices and integrated circuits

1 THz-bandwidth proper for high-speed devices and integrated circuits

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© The Institution of Electrical Engineers
Published

We describe an external electro-optic technique for characterising high-speed electrical signals in two-dimensional electrode structures of devices and integrated circuits fabricated on any substrate material. A temporal resolution of less than 300 fs, corresponding to a bandwidth in excess of 1 THz has been achieved.

Inspec keywords: probes; electro-optical effects; semiconductor device testing; digital integrated circuits; integrated circuit testing

Other keywords: 1 THz; high-speed electrical signals; temporal resolution; external electro-optic technique; high-speed devices; prober; digital IC testing; integrated circuits; two-dimensional electrode structures; 300 fs

Subjects: Testing; Production facilities and engineering; Semiconductor devices; Semiconductor integrated circuits; Digital electronics; Manufacturing processes

References

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      • K.J. Weingarten , M.J.W. Rodwell , H.K. Heinrich , B.H. Kolner , D.M. Bloom . Direct electro-optic sampling of GaAs integrated circuits. Electron. Lett. , 765 - 766
    2. 2)
      • J.A. Valdmanis , G.A. Mourou , C.W. Gabel . Subpicosecond electrical sampling. IEEE J. Quantum Electron. , 664 - 667
    3. 3)
      • Valdmanis, J.A., Pei, S.S.: `A non-contact electro-optic prober for high speed integrated circuits', Proc. conf. on picosecond electronics and optoelectronics, January 1987, Springer-Verlag, Berlin, 1987.
    4. 4)
      • K.P. Cheung , D.H. Auston . Coherent excitation of phonon polaritons with femtosecond optical pulses. Phys. Rev. Lett. , 2152 - 2155
    5. 5)
      • J. Nees , G. Mourou . Noncontact electro-optic sampling with a GaAs injection laser. Electron. Lett. , 918 - 919
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