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Bandwidth limited picosecond optical pulse generation from actively mode-locked AlGaAs diode laser

Bandwidth limited picosecond optical pulse generation from actively mode-locked AlGaAs diode laser

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© The Institution of Electrical Engineers
Published

A simple configuration made of a conventional AlGaAs diode laser without antireflection coating combined with an external reflector and an optical etalon was proved to be practically feasible to generate bandwidth limited mode-locked optical pulses of 30 ps duration by synchronous modulation at the external cavity mode interval. Generated optical pulse shape was found to be Lorentzian rather than Gaussian for the first time, based on the measurements of both the s.h.g. correlation method and the ultrafast streak camera.

Inspec keywords: III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers

Other keywords: III-V semiconductors; mode locked AlGaAs diode laser; synchronous modulation; Lorentzian pulses; external reflector; optical pulse generation; optical etalon

Subjects: Design of specific laser systems; Lasing action in semiconductors; Semiconductor lasers

References

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      • P.-T. Ho . Coherent pules generation with a GaAlAs laser by active modelocking. Electron. Lett. , 526 - 527
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      • P.-T. Ho , L.A. Glasser , E.P. Ippen , H.A. Haus . Picosecond pules generation with a C.W. GaAlAs laser diode. Appl. Phys. Lett. , 241 - 242
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      • T. Sugeta , T. Urisu , S. Sakata , Y. Mizushima . Metal-semi-conductor-metal photodetector for high-speed optoelectronic circuits. Japan J. Appl. Phys.
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      • L.A. Glasser . C.W. modelocking of a GaInAsP diode laser. Electron. Lett. , 725 - 726
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      • H. Ito , H. Yokoyama , S. Murata , H. Inaba . Picoscecond optical pulse generation from an r.f. modulated AlGaAs d.h. diode laser. Electron. Lett. , 738 - 740
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