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Diffusion noise in double-injection diodes in the ohmic relaxation regime

Diffusion noise in double-injection diodes in the ohmic relaxation regime

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© The Institution of Electrical Engineers
Published

A derivation is given for the effects of diffusion noise for double-injection diodes in the Ohmic relaxation regime. It leads to thermal noise of the d.c. resistance Va/Ia at high frequencies and a possible additional term similar to g–r noise at low frequencies, whose existence is still in doubt.

Inspec keywords: noise; diffusion; semiconductor diodes

Other keywords: Fourier analysis; Langevins equation; ohmic relaxation regime; double injection noise; diffusion noise

Subjects: Semiconductor devices; Junction and barrier diodes

References

    1. 1)
      • P.R. Worch , H.R. Bilger . G–R noise experiments in double injection silicon diodes operating in the semiconductor regime. Physica , 161 - 176
    2. 2)
      • A. van der Ziel . More rigorous proof of the thermal-noise formula for double-injection diodes for ωτ ≫ 1. Electron. Lett. , 231 - 232
    3. 3)
      • F. Driedonks , J.J.M. van Gasteren . Admittance and noise of germanium double injection diodes. Physica , 606 - 624
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