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65 GHz small-signal-bandwidth switched emitter follower in InP heterojunction bipolar transistors

65 GHz small-signal-bandwidth switched emitter follower in InP heterojunction bipolar transistors

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Performances of two switched emitter follower structures for large bandwidth applications have been optimised, compared, implemented and measured. These circuits have been fabricated with a 320 GHz-FT InP double heterojunction bipolar transistor process. Measurements in track mode show a small-signal bandwidth over 65 GHz for one structure and over 50 GHz for the other. Track mode SFDR measured for 500 mVPP up to 15 GHz signal input is greater than 45 dBc.

References

    1. 1)
      • Godin, J.: `Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs', Proc. of CSICS’2008, October 2008, Monterey, CA, USA, p. 109–112, paper F2.
    2. 2)
      • J. Lee , Y. Baeyens , J. Wiener , Y.-K. Chen . A 50GS/s distributed T/H amplifier in 0.18 µm SiGe BiCMOS. IEEE J. Solid-State Circuits , 2334 - 2339
    3. 3)
      • Bouvier, Y., Ouslimani, A., Konczykowska, A., Godin, J.: `InP-DHBT switched emitter follower for track-and-hold amplifier', 2009 Global Symp. on Millimeter Waves, April 2009, Sendai, Japan.
    4. 4)
      • Li, X., Lance Kuo, W.-M., Cressler, J.D.: `A 40 GS/s SiGe track-and-hold amplifier', Proc. Bipolar/BiCMOS Circuits and Technology Meeting, October 2008, Monterey, CA, USA, p. 466–468.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2012.1770
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