1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth
1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth
- Author(s): H. Zhao ; Å. Haglund ; P. Westburgh ; S.M. Wang ; J.S. Gustavsson ; M. Sadeghi ; A. Larsson
- DOI: 10.1049/el.2009.3657
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- Author(s): H. Zhao 1 ; Å. Haglund 1 ; P. Westburgh 1 ; S.M. Wang 1 ; J.S. Gustavsson 1 ; M. Sadeghi 2 ; A. Larsson 1
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View affiliations
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Affiliations:
1: Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden
2: Nanofabrication Laboratory, Department of Microtechnology and Nanoscience Chalmers, University of Technology, Göteborg, Sweden
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Affiliations:
1: Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden
- Source:
Volume 45, Issue 7,
26 March 2009,
p.
356 – 357
DOI: 10.1049/el.2009.3657 , Print ISSN 0013-5194, Online ISSN 1350-911X
The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth. High speed, ridge waveguide lasers fabricated from high quality material grown by molecular beam epitaxy exhibited a damped modulation response with a bandwidth of 13 GHz.
Inspec keywords: indium compounds; quantum well lasers; wide band gap semiconductors; semiconductor growth; waveguide lasers; optical communication equipment; laser cavity resonators; optical modulation; gallium compounds; III-V semiconductors; ridge waveguides; gallium arsenide; molecular beam epitaxial growth
Other keywords:
Subjects: Laser resonators and cavities; Design of specific laser systems; Lasing action in semiconductors; Laser beam modulation, pulsing and switching; mode locking and tuning; Laser beam modulation, pulsing and switching; mode locking and tuning; Semiconductor lasers; Optical communication devices, equipment and systems; Optical communication equipment; Laser resonators and cavities
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